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| author | Joern Engel <joern@wh.fh-wedel.de> | 2006-05-30 14:25:24 +0200 |
|---|---|---|
| committer | Joern Engel <joern@wh.fh-wedel.de> | 2006-05-30 14:25:24 +0200 |
| commit | 92cbfdcc3661d7670b01b92b89811cd3a2412297 (patch) | |
| tree | 70e4c9a94a121594e58a57c4c454ac854bb10a3a /include/mtd | |
| parent | e369d62e92d526a7ed641e2f0b2978fb0ce366c5 (diff) | |
| download | kernel_samsung_aries-92cbfdcc3661d7670b01b92b89811cd3a2412297.zip kernel_samsung_aries-92cbfdcc3661d7670b01b92b89811cd3a2412297.tar.gz kernel_samsung_aries-92cbfdcc3661d7670b01b92b89811cd3a2412297.tar.bz2 | |
[MTD] replace MTD_RAM with MTD_GENERIC_TYPE
Ram devices get the extra capability of MTD_NO_ERASE - not requiring
an explicit erase before writing to it. Currently only mtdblock uses
this capability. Rest of the patch is a simple text replacement.
Signed-off-by: Joern Engel <joern@wh.fh-wedel.de>
Diffstat (limited to 'include/mtd')
| -rw-r--r-- | include/mtd/mtd-abi.h | 4 |
1 files changed, 2 insertions, 2 deletions
diff --git a/include/mtd/mtd-abi.h b/include/mtd/mtd-abi.h index 1ce365b..7ccadb1 100644 --- a/include/mtd/mtd-abi.h +++ b/include/mtd/mtd-abi.h @@ -24,7 +24,6 @@ struct mtd_oob_buf { }; #define MTD_ABSENT 0 -#define MTD_RAM 1 #define MTD_NORFLASH 3 #define MTD_NANDFLASH 4 #define MTD_DATAFLASH 6 @@ -32,10 +31,11 @@ struct mtd_oob_buf { #define MTD_WRITEABLE 0x400 /* Device is writeable */ #define MTD_BIT_WRITEABLE 0x800 /* Single bits can be flipped */ +#define MTD_NO_ERASE 0x1000 /* No erase necessary */ // Some common devices / combinations of capabilities #define MTD_CAP_ROM 0 -#define MTD_CAP_RAM (MTD_WRITEABLE | MTD_BIT_WRITEABLE) +#define MTD_CAP_RAM (MTD_WRITEABLE | MTD_BIT_WRITEABLE | MTD_NO_ERASE) #define MTD_CAP_NORFLASH (MTD_WRITEABLE | MTD_BIT_WRITEABLE) #define MTD_CAP_NANDFLASH (MTD_WRITEABLE) |